MULTILAYER LEAD FRAME AND SEMICONDUCTOR DEVICE

PURPOSE:To provide a multilayer lead frame having excellent electric characteristics for high rate signal which can be manufactured easily and a semiconductor device excellent in high rate characteristics. CONSTITUTION:The multilayer lead frame comprises a platelike first layer 10 to be used as a gr...

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Bibliographische Detailangaben
1. Verfasser:	SHIMIZU MITSUHARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a multilayer lead frame having excellent electric characteristics for high rate signal which can be manufactured easily and a semiconductor device excellent in high rate characteristics. CONSTITUTION:The multilayer lead frame comprises a platelike first layer 10 to be used as a ground layer or a power supply layer, a framelike second layer 12 laminated on the first layer to be used as a power supply layer or a ground layer, and a signal layer 14 laminated on the second layer, wherein a decoupling capacitor 18 comprising a dielectric part 18a having predetermined capacitance is provided at a position on the first layer 10 other than the joint to the second layer 12 while being connected electrically with the first layer 10.