SEMICONDUCTOR DEVICE

PURPOSE:To provide a semiconductor device which is enhanced both in element isolating power by electric charge stored in an insulating film due to radiation and in degree of integration. CONSTITUTION:A conductor 3 is provided onto a field oxide film 5 (or an interlayer insulating film 2 formed on the film 5) provided for isolating elements 4 and 5 formed on semiconductor substrates 9 and 10 of certain conductivity type from each other, a potential opposite to that of a semiconductor substrate is applied to the conductor 3, and electrical charge stored in the field oxide film 5 irradiated with radiation is attracted to the side of the film 5 opposite to its side adjoining to the semiconductor substrate, whereby an inversion layer is prevented from being formed in the semiconductor substrate to restrain a semiconductor device of this design from deteriorating in element isolation power.