JPH065386B

PURPOSE:To obviate the swelling of a resist and to improve definition by projecting an electron beam to an electron beam resist, then heating the same, thereby dissipating the unirradiated region and forming a pattern. CONSTITUTION:The electron beam is projected to the electron beam resist essential...

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Bibliographische Detailangaben
Hauptverfasser:	OOTAKI MASAO, TANAKA KEIJI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obviate the swelling of a resist and to improve definition by projecting an electron beam to an electron beam resist, then heating the same, thereby dissipating the unirradiated region and forming a pattern. CONSTITUTION:The electron beam is projected to the electron beam resist essentially consisting of a copolymer of the ethyl-1-cyanoacrylate expressed by the formula I and the allyl-2-cyanoacrylate expressed by the formula II and is then heated, by which the unirradiated region is dissipated and the pattern is formed. The resist pattern is formed by the dry development to heat the substrate after the electron beam irradiation in such a manner and, therefore, the remaining of scum is obviated and the good shape is obtd. as compared to the pattern formed by the wet development using a solvent. In addition, swelling of the resist in developing - rinsing stages is eliminated and the definition is enhanced.