SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor device of multilayer interconnection structure having a fuse wherein the fuse is readily fused and no damage is caused to wiring layers. CONSTITUTION:A polycrystalline silicon fuse 13 is formed, by a low temperature CVD method, in an upper layer of a multilayer inte...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KIKUCHI MASAHARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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