SEMICONDUCTOR DEVICE

PURPOSE:To obtain a semiconductor device of multilayer interconnection structure having a fuse wherein the fuse is readily fused and no damage is caused to wiring layers. CONSTITUTION:A polycrystalline silicon fuse 13 is formed, by a low temperature CVD method, in an upper layer of a multilayer inte...

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Bibliographische Detailangaben
1. Verfasser:	KIKUCHI MASAHARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain a semiconductor device of multilayer interconnection structure having a fuse wherein the fuse is readily fused and no damage is caused to wiring layers. CONSTITUTION:A polycrystalline silicon fuse 13 is formed, by a low temperature CVD method, in an upper layer of a multilayer interconnection structure, composed of a first wiring layer 4 through a fourth wiring layer. This reduces the number of films through which laser beam passes in fusing of the fuse 13, and facilitates the fusing. In addition no damage due to heat is caused to lower wiring layers during the formation of the fuse 13.