DISPLAY DEVICE

PURPOSE:To provide the display device which obviates the generation of the short circuit between electrodes or electrostatic breakdown in an interlayer insulating film even if these electrodes are formed to face each other via the interlayer insulating film. CONSTITUTION:The gate electrode 21 consis...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAMURA ISAO, KAKIHARA YOSHINOBU, MATSUGI KAZUNORI, ISHIBASHI SETSUO, BITOU MITSUO, WAGA SATOSHI, TAKITA KAZUNARI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE:To provide the display device which obviates the generation of the short circuit between electrodes or electrostatic breakdown in an interlayer insulating film even if these electrodes are formed to face each other via the interlayer insulating film. CONSTITUTION:The gate electrode 21 consisting of a ground surface layer 22, a highly conductive layer 23 and an oxidation resistant conductive layer 24 is formed at nearly the same film thickness as the film thickness of an insulating film 9 on a glass substrate 1. The interlayer insulating film 9 as a gate insulating film is formed thereon and further, an ordinary a-Si film 4, an etch stopper layer 5, an n+Si film 6, a source electrode 7 and a drain electrode 8 are formed thereon, by which a TFT is constituted.