METHOD OF DOPING AMORPHOUS SILICON AND METHOD OF PRODUCING ELECTROPHOTOGRAPHIC RECORDING MATERIAL

In doping with amorphous Si, by gas-discharge sepn., (CH3)3P is added to the gas. The concn. of (CH3)3P is 10 power minus 4 -80 (pref. 10-3-1) mols.%. The gas is mono- or di-silane, to which CH4, C2H6 or C2H2 may be added. The gas-discharge is a high frequency discharge, in a flowing gas. USE/ADVANT...

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Hauptverfasser:	MATEIASU ARUBERUTO, KURAUSU SHIYAADE, RUUMEN DERUCHIEFU, ZABIINE DORAIHEEFUAA, MANFUREETO RUTSUTSU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY ELECTROPHOTOGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETOGRAPHY METALLURGY PHOTOGRAPHY PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	In doping with amorphous Si, by gas-discharge sepn., (CH3)3P is added to the gas. The concn. of (CH3)3P is 10 power minus 4 -80 (pref. 10-3-1) mols.%. The gas is mono- or di-silane, to which CH4, C2H6 or C2H2 may be added. The gas-discharge is a high frequency discharge, in a flowing gas. USE/ADVANTAGE - The process is used for the prodn. of an electrophotographic recording material with at least 1 layer of amorphous Si (claimed), for the prodn. of diode structures of amorphous Si, of ohmic contacts on such structures, and in solar cells. (CH3)3P is a liq. with b.pt. 38 deg.C, and is safe w.r.t. health. A pre-determined doping concn. can be obtd.