DRIVING CIRCUIT FOR CURRENT DRIVING TYPE SEMICONDUCTOR SWITCHING ELEMENT

PURPOSE:To reduce a heating loss to a minimum at the time of a charge pulling-out and to attain the miniaturization and a low cost in a drive circuit which drives a current driving type semiconductor switching element. CONSTITUTION:A driving circuit A1 which drives a current driving type transistor...

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Bibliographische Detailangaben
Hauptverfasser: MIZOBUCHI YASUYUKI, MAKINOSE KOUICHI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PURPOSE:To reduce a heating loss to a minimum at the time of a charge pulling-out and to attain the miniaturization and a low cost in a drive circuit which drives a current driving type semiconductor switching element. CONSTITUTION:A driving circuit A1 which drives a current driving type transistor Q0 is constituted of a current injecting means (transistor Q1, resistors R1 and R3, and positive power source +E), and a current pulling-out means (inductor L, capacitor C, and diode D). When the transistor Q1 is turned on, and the injection of currents IB into a transistor Q0 is started, the transistor Q0 is turned on and simultaneously currents (power) for pulling-out are stored in the inductor L. When the transistor Q1 is turned off, the charge stored in the transistor Q0 is turned to the currents in the opposed direction to the currents IB and extracted through the inductor L by the power for extraction stored in the inductor L and the transistor Q0 is turned off.