INVERSION-MODE ELECTRON EMISSION DEVICE
PURPOSE: To provide a reverse mode diamond electron source capable of controlling electron emission having an insulating area between a primary surface and a control electrode. CONSTITUTION: An electron emitting surface 133 and a primary surface 135 are formed on a supporting substrate 101. A semico...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PURPOSE: To provide a reverse mode diamond electron source capable of controlling electron emission having an insulating area between a primary surface and a control electrode. CONSTITUTION: An electron emitting surface 133 and a primary surface 135 are formed on a supporting substrate 101. A semiconductor diamond electron emitter 102 in which impurities are selectively doped is arranged. The first insulating layer 103 is arranged on a surface of the supporting substrate 101 and close to a part of the primary surface 135 in the electron emitter 102. A control electrode 104 is placed on the insulating layer 103, and the primary surface 135 is positioned on a periphery of a part of the primary surface 135 in the electron emitter 102 so that an insulating area 111 is provided between the control electrodes 104. The insulating area 111 is materialized by adequately coating a layer of insulating material which can contain a part of the insulating layer 103. Or the insulating area is materialized as a gap between material containing the control electrode 104 and material composing the electron emitter 102. |
---|