METHOD FOR MANUFACTURE OF SENSOR AND SENSOR

PURPOSE: To control an etching step in a manufacturing process more accurately, and obtain high dimensional accuracy. CONSTITUTION: A layer plate 5 is formed. In this case, an etching layer 3 is laid out between an upper layer 1 and a lower layer 2, which are made of single-crystal silicon, and a gr...

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Bibliographische Detailangaben
Hauptverfasser:	FURANKU BANTEIIN, GERUHARUTO BENTSU, IRI MAREKU, FURANTSU RERUMAA, ANDOREA SHIRUPU, HORUSUTO MIYUNTSUERU, MIHIYAERU OTSUFUENBERUKU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PURPOSE: To control an etching step in a manufacturing process more accurately, and obtain high dimensional accuracy. CONSTITUTION: A layer plate 5 is formed. In this case, an etching layer 3 is laid out between an upper layer 1 and a lower layer 2, which are made of single-crystal silicon, and a groove 4 extending to the etching layer 3 is worked and shaped, thereby forming a predetermined structure in the upper layer 1. The etching layer 3 located below at least a part of the structure is removed.