SEMICONDUCTOR DEVICE FOR DETECTING LIGHT

PURPOSE:To provide a semiconductor device (a photo-diode) for detecting light, which can be operated at higher speed than conventional devices. CONSTITUTION:11 represents a transparent substrate, 12 an undoped amorphous silicon layer and 13 an undoped amorphous silicon carbide layer. 14 represents a...

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Hauptverfasser: TANAKA SAKAE, KANDA YASUNARI, OGIWARA YOSHIHISA
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creator TANAKA SAKAE
KANDA YASUNARI
OGIWARA YOSHIHISA
description PURPOSE:To provide a semiconductor device (a photo-diode) for detecting light, which can be operated at higher speed than conventional devices. CONSTITUTION:11 represents a transparent substrate, 12 an undoped amorphous silicon layer and 13 an undoped amorphous silicon carbide layer. 14 represents a surface electrode layer, and is formed by using the transparent electrode layer of ITO, etc. 15 represents a rear electrode layer, and is formed by employing the metallic electrode layers of Cr, etc. The surface electrode layer 14 is formed on substantially the whole surface of the semiconductor layer while the rear electrode layers 15 are formed in a striped shape. According to such constitution, equivalent capacity can be reduced largely without approximately diminishing the currents of a photo-diode.
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subjects BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
title SEMICONDUCTOR DEVICE FOR DETECTING LIGHT
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