SEMICONDUCTOR DEVICE FOR DETECTING LIGHT

PURPOSE:To provide a semiconductor device (a photo-diode) for detecting light, which can be operated at higher speed than conventional devices. CONSTITUTION:11 represents a transparent substrate, 12 an undoped amorphous silicon layer and 13 an undoped amorphous silicon carbide layer. 14 represents a...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA SAKAE, KANDA YASUNARI, OGIWARA YOSHIHISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a semiconductor device (a photo-diode) for detecting light, which can be operated at higher speed than conventional devices. CONSTITUTION:11 represents a transparent substrate, 12 an undoped amorphous silicon layer and 13 an undoped amorphous silicon carbide layer. 14 represents a surface electrode layer, and is formed by using the transparent electrode layer of ITO, etc. 15 represents a rear electrode layer, and is formed by employing the metallic electrode layers of Cr, etc. The surface electrode layer 14 is formed on substantially the whole surface of the semiconductor layer while the rear electrode layers 15 are formed in a striped shape. According to such constitution, equivalent capacity can be reduced largely without approximately diminishing the currents of a photo-diode.