SEMICONDUCTOR DEVICE FOR DETECTING LIGHT

PURPOSE:To provide a semiconductor device for detecting light, in which breakdown strength can be increased and leakage currents reduced. CONSTITUTION:11 represents a transparent substrate, 12 an undoped amorphous silicon layer and 13 an undoped amorphous silicon carbide layer. 14 represents a surfa...

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Bibliographische Detailangaben
Hauptverfasser:	TANAKA SAKAE, KANDA YASUNARI, OGIWARA YOSHIHISA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a semiconductor device for detecting light, in which breakdown strength can be increased and leakage currents reduced. CONSTITUTION:11 represents a transparent substrate, 12 an undoped amorphous silicon layer and 13 an undoped amorphous silicon carbide layer. 14 represents a surface electrode layer, and is formed by using of the transparent electrode layer of ITO, etc. 15 represents a rear electrode layer, and is formed by employing the metallic electrode layer of Cr, etc. According to such constitution, the reverse breakdown strength of a photo-diode is increased, thus largely reducing leakage currents.