FORMATION OF MULTIPLE OXIDE FILM

PURPOSE:To provide a method for forming a multiple oxide film by which a thick multiple oxide film can easily be formed without cracking. CONSTITUTION:A sol is applied and dried (steps S1, S2) on the top of a substrate to form a film by a sol-gel method and this film is brought into hydrolysis and p...

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Bibliographische Detailangaben
1. Verfasser:	KANZAWA AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS SPECIALLY ADAPTED THEREFOR APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE CHEMISTRY CINEMATOGRAPHY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY MICROSTRUCTURAL TECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a method for forming a multiple oxide film by which a thick multiple oxide film can easily be formed without cracking. CONSTITUTION:A sol is applied and dried (steps S1, S2) on the top of a substrate to form a film by a sol-gel method and this film is brought into hydrolysis and polycondensation reactions by irradiation (step S3) with radiation having prescribed energy. Since the resulting multiple oxide film becomes a polymer film, cracking is not caused even in the case of a thick multiple oxide film.