PREPARATION OF CAPACITOR FOR SEMICONDUCTOR MEMORY

PURPOSE: To increase the capacitance of a capacitor of a semiconductor memory device by a process of forming first spacers on the sidewalls of photoresist patterns, a process of etching a conductive layer using the first spacers as masks, and moreover, a process of etching the conductive layer utilizing the second spacers as masks and the like. CONSTITUTION: A conductive layer 50 is formed on a semiconductor substrate 10, and photoresist patterns are formed on the layer 50. Then, the layer 50 is etched, first step parts 50a are formed on the layer 50, and first spacers 60a are respectively formed on the sidewalls of the photoresist patterns. Then, the layer 50 is etched using the spacers 60a as masks, second step parts 50b are formed on the layer 50 and moreover, the patterns and the spacers 60a are removed. Then, a first material layer is formed, and the first material layer is etched to form second spacers 66 on the sidewalls of the step parts 50a and 50b. Then, the layer 50 is etched, utilizing the spacers 66 as masks and a storage electrode of a capacitor is formed.