SEMICONDUCTOR MEMORY DEVICE

PURPOSE:To simultaneously achieve the low power consumption and the high- speed read/write operation of a RAM in a standby state. CONSTITUTION:In a diode load-type memory cell 10, an n type diffused layer 2 is formed at the lower side of a p-type diffused layer 5 constituting a high- resistance load...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IWABUCHI MASATO, USAMI MASAMI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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