MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To reduce a mask process in the manufacturing process of a semiconductor device having a capacitance element without producing an overhang in the contact region of a capacitance lower-part electrode. CONSTITUTION:A first insulating film 106 is formed on a capacitance lower-part electrode 105 formed on a semiconductor substrate 101. After that, the first insulating film 106 is etched selectively. A first opening part 108 is formed in a region in which a capacitance insulating film is formed, and a second opening part 109 is,formed in a region in which a contact for the capacitance lower-part electrode is formed. A second insulating film 110 to be used as a capacitance insulating film is formed on the capacitance lower-part electrode 105 and the first insulating film 106, and the second insulating film 110 is etched selectively. The bottom part of the second opening part 109 in the second insulating film 110 and the peripheral edge part of the second opening part 109 on the first insulating film are removed. After that, a capacitance upper-part electrode 113 is formed in the first opening part 108, and a contact electrode 114 for the capacitance lower-part electrode is formed in a second opening part 112.