APPARATUS FOR PRODUCTION OF SEMICONDUCTOR
PURPOSE:To form metal sputtered films having high quality with a metal sputtering device by providing a transporting chamber with a wafer heating mechanism and removing the moisture of wafer surfaces just prior to sputtering. CONSTITUTION:The surface of the wafer transferred into the transporting ch...
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| creator | YOSHII SHIGEJI |
| description | PURPOSE:To form metal sputtered films having high quality with a metal sputtering device by providing a transporting chamber with a wafer heating mechanism and removing the moisture of wafer surfaces just prior to sputtering. CONSTITUTION:The surface of the wafer transferred into the transporting chamber 2 is heated to about 200 to 300 deg.C by a heating mechanism 11 mounted on a transporting arm 7. The moisture sticking to the wafer surface is completely evaporated away by the heating treatment, by which the wafer surface is stabilized. The next wafer is subjected to the heating treatment while the previous wafer is subjected to deposition by sputtering and, therefore, the lamp heating is executed by utilizing the time for waiting for the sputtering in spite of the increase in the processes. The increase of the processes is consequently not the factor for an increase in time. Since the heating is by the lamp of a halogen lamp, the adverse influence to be exerted on another parts in the transporting chamber is eliminated. The nonuniform formation of the metal deposited films does not arise any more and the patterning defects decrease. |
| format | Patent |
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CONSTITUTION:The surface of the wafer transferred into the transporting chamber 2 is heated to about 200 to 300 deg.C by a heating mechanism 11 mounted on a transporting arm 7. The moisture sticking to the wafer surface is completely evaporated away by the heating treatment, by which the wafer surface is stabilized. The next wafer is subjected to the heating treatment while the previous wafer is subjected to deposition by sputtering and, therefore, the lamp heating is executed by utilizing the time for waiting for the sputtering in spite of the increase in the processes. The increase of the processes is consequently not the factor for an increase in time. Since the heating is by the lamp of a halogen lamp, the adverse influence to be exerted on another parts in the transporting chamber is eliminated. The nonuniform formation of the metal deposited films does not arise any more and the patterning defects decrease.</description><edition>5</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1994</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19941129&DB=EPODOC&CC=JP&NR=H06330307A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19941129&DB=EPODOC&CC=JP&NR=H06330307A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHII SHIGEJI</creatorcontrib><title>APPARATUS FOR PRODUCTION OF SEMICONDUCTOR</title><description>PURPOSE:To form metal sputtered films having high quality with a metal sputtering device by providing a transporting chamber with a wafer heating mechanism and removing the moisture of wafer surfaces just prior to sputtering. CONSTITUTION:The surface of the wafer transferred into the transporting chamber 2 is heated to about 200 to 300 deg.C by a heating mechanism 11 mounted on a transporting arm 7. The moisture sticking to the wafer surface is completely evaporated away by the heating treatment, by which the wafer surface is stabilized. The next wafer is subjected to the heating treatment while the previous wafer is subjected to deposition by sputtering and, therefore, the lamp heating is executed by utilizing the time for waiting for the sputtering in spite of the increase in the processes. The increase of the processes is consequently not the factor for an increase in time. Since the heating is by the lamp of a halogen lamp, the adverse influence to be exerted on another parts in the transporting chamber is eliminated. The nonuniform formation of the metal deposited films does not arise any more and the patterning defects decrease.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1994</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB0DAhwDHIMCQ1WcPMPUggI8ncJdQ7x9PdT8HdTCHb19XT29wOJ-AfxMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4rwAPAzNjYwNjA3NHY2LUAABPICTR</recordid><startdate>19941129</startdate><enddate>19941129</enddate><creator>YOSHII SHIGEJI</creator><scope>EVB</scope></search><sort><creationdate>19941129</creationdate><title>APPARATUS FOR PRODUCTION OF SEMICONDUCTOR</title><author>YOSHII SHIGEJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPH06330307A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1994</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHII SHIGEJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHII SHIGEJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR PRODUCTION OF SEMICONDUCTOR</title><date>1994-11-29</date><risdate>1994</risdate><abstract>PURPOSE:To form metal sputtered films having high quality with a metal sputtering device by providing a transporting chamber with a wafer heating mechanism and removing the moisture of wafer surfaces just prior to sputtering. CONSTITUTION:The surface of the wafer transferred into the transporting chamber 2 is heated to about 200 to 300 deg.C by a heating mechanism 11 mounted on a transporting arm 7. The moisture sticking to the wafer surface is completely evaporated away by the heating treatment, by which the wafer surface is stabilized. The next wafer is subjected to the heating treatment while the previous wafer is subjected to deposition by sputtering and, therefore, the lamp heating is executed by utilizing the time for waiting for the sputtering in spite of the increase in the processes. The increase of the processes is consequently not the factor for an increase in time. Since the heating is by the lamp of a halogen lamp, the adverse influence to be exerted on another parts in the transporting chamber is eliminated. The nonuniform formation of the metal deposited films does not arise any more and the patterning defects decrease.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | APPARATUS FOR PRODUCTION OF SEMICONDUCTOR |
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