APPARATUS FOR PRODUCTION OF SEMICONDUCTOR

PURPOSE:To form metal sputtered films having high quality with a metal sputtering device by providing a transporting chamber with a wafer heating mechanism and removing the moisture of wafer surfaces just prior to sputtering. CONSTITUTION:The surface of the wafer transferred into the transporting chamber 2 is heated to about 200 to 300 deg.C by a heating mechanism 11 mounted on a transporting arm 7. The moisture sticking to the wafer surface is completely evaporated away by the heating treatment, by which the wafer surface is stabilized. The next wafer is subjected to the heating treatment while the previous wafer is subjected to deposition by sputtering and, therefore, the lamp heating is executed by utilizing the time for waiting for the sputtering in spite of the increase in the processes. The increase of the processes is consequently not the factor for an increase in time. Since the heating is by the lamp of a halogen lamp, the adverse influence to be exerted on another parts in the transporting chamber is eliminated. The nonuniform formation of the metal deposited films does not arise any more and the patterning defects decrease.