FORMATION METHOD FOR HOLE STRUCTURE IN SILICON SUBSTRATE

PURPOSE: To form a pore structure with a large aspect ratio whose depth exceeds 20 μm on a silicon-made substrate, irrespective of its hole diameter. CONSTITUTION: A fine hole 4 is provided in order to form a hole structure 6 in an n-doped single crystal silicon-made substrate 1 where the depth of t...

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Hauptverfasser:	UORUFUGANGU HENRAIN, FUORUKAA REEMAN, YOOZEFU UIRAA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: To form a pore structure with a large aspect ratio whose depth exceeds 20 μm on a silicon-made substrate, irrespective of its hole diameter. CONSTITUTION: A fine hole 4 is provided in order to form a hole structure 6 in an n-doped single crystal silicon-made substrate 1 where the depth of the fine hole 4 is equivalent to that of the hole structure 6 which starts from a first main surface 2 by electric chemical etching on the substrate. There is formed a mask which segments the cross section of the hole structure 6 in parallel to the first main surface. The hole structure 6 is formed by removing the silicon which forms the side wall of the fine hole 4 that is not covered with the mask, through the use of selective etching of the mask.