SEMICONDUCTOR DEVICE

PURPOSE:To decrease the opene circuit defects of conducting layers in the vicinity of a bonding pad cuased by corrosion by providing the first conducting layer, which is formed on the main surface side of a semiconductor substrate and the second conducting layers, which are in contact with the upper surface of the first conducting layer and become the bonding pads. CONSTITUTION:A semiconductor substrate 11 made of silicon or the like, a first conducting layer comprising molybdenum and second conducting layers 15a and 15b comprising aluminum or the like are provided. The first conducting layer 13 is arranged on the main surface side of the semiconductor substrate 11. The second conducting layer 15a and 15b, which become the bonding pads, are arranged in contact with the upper surface of at least one part of the first conducting layer 13. Therefore, the first conducting layer 13 is present beneath the second conductor layers 15a and 15b. Therefore, even if corroded parts 18 of the second conducing layers are formed, the opene circuit defects of the conductor layers do not occur because the second conductor layers 15a and 15b are electrically connected through the first conductor layer 13.