SOLID-STATE LIGHT EMITTING ELEMENT

PURPOSE:To obtain an element that emits light of a range from ultra-violet to green by forming a II-VI compound semiconductor that can be driven by low voltage, depositing a III-V compound semiconductor layer on layers of II-VI compound semiconductors deposited on a III-V compound semiconductor substrate. CONSTITUTION:On a III-V compound semiconductor substrate 10 or 50, II-VI compound semiconductor layers 12 to 18 or 52 to 58 are formed, on which III-V compound semiconductor layer 19 or 59 is formed. An electrode made of thin metal film 21 or 20 is connected to the layer 19 or 59 through a semiconductor layer 19 or 59. For example, on an n-GaAs substrate 10, buffer layers of an n-GaAs layer 11 and an n-ZnSe layer 12, a clad layer of an n-ZnSSe layer 13, active layers of an n-ZnSe layer 14, a CdZnSe layer of quantum well 15 and a p-ZnSe layer 16, a clad layer of a p-ZnSSe layer 17, contact layers of a p-ZnSe layer 18 and a p-GaAs layer 19 are formed.