MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To provide the manufacturing method of such a semiconductor device which can suppress the occurrence of punch through phenomena while the gates of an n- and p-channel MOS transistors are maintained at the same dimension and can cope with an increase in degree of integration. CONSTITUTION:Sid...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	HIROSUE MASAHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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