THIN-FILM TRANSISTOR MATRIX AND ITS PRODUCTION

PURPOSE:To provide the structure and method which eliminate variations by uniformalizing the parasitic capacity between gates and sources relating to the thin-film transistor (TFT) matrix and the process for production of this matrix. CONSTITUTION:This TFT matrix is constituted by disposing the TFTs near the intersected points of gate bus lines 2 and drain bus lines 9, laminating gate electrodes 2a, 2b, gate insulating films 3 and operating semiconductor films 4 in this order on a transparent insulating substrate 1, disposing source electrodes 6a, 6b and drain electrodes 7a, 7b on the operating semiconductor film 4, connecting the gate electrodes 2a, 2b to the gate bus lines 2 and connecting the source electrodes 6a, 6b to pixel electrode 8 in the TFTs. The gate electrodes 2a, 2b consist of main gate electrodes 2a projecting like comb teeth from the gate bus lines 2 and auxiliary gate electrodes 2b. The pixel electrodes 8 are constituted of the TFT matrix consisting of the continuous film extending across and onto the auxiliary gate electrodes 2b from above the main gate electrodes 2a.