INSULATED GATE BIPOLAR TRANSISTOR

PURPOSE:To provide an insulated gate bipolar transistor wherein a parasitic thyristor is protected against latch-up and lessened in turn-OFF time. CONSTITUTION:In an insulated gate bipolar transistor, a potential barrier to majority carriers in a collector layer is provided in a base layer adjacent...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MARUYAMA KISHIKO, KANBARA SHIRO, TAKAHASHI MAKOTO, MATSUO HITOSHI, TOYABE TATSU, ITO SATOSHI, TANAKA JUNKO, OKURA YASUYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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