MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To avoid the development of a defective underlaying layer by a method wherein the stress during and after the formation of the first and second protective insulating films formed on a wiring layer of a semiconductor device is to be reduced. CONSTITUTION:After the formation of wiring layers 14 on a semiconductor substrate 12b, the first insulating film 22a having compressive stress is thinly formed by plasma CVD step and the second insulating film 22b having tensile stress is formed thereon by thermal CVD step and then the third insulating film 22c having compressive stress is formed thereon by plasma CVD step again and finally the second protective insulating film 23 comprising a resin base coated insulating film also having tensile stress is formed setting up the film thickness so that the warp to the substrate due to said stress of the first- third insulating films 22a-22c may be dissolved.