DRY-ETCHING DEVICE

PURPOSE:To cut down the device cost for increasing the throughput by a method wherein an exhaust chamber is connected to exhaust ports provided on the periphries of respective opposite electrodes while gas leading-in ports are provided on respective electrodes for arranging homogenizing sheets betwe...

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Bibliographische Detailangaben
Hauptverfasser:	WAKUI TAKAYUKI, KONISHI NOBUTAKE, YAMAMOTO HIDEAKI, HORII JUICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-LINEAR OPTICS NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	PURPOSE:To cut down the device cost for increasing the throughput by a method wherein an exhaust chamber is connected to exhaust ports provided on the periphries of respective opposite electrodes while gas leading-in ports are provided on respective electrodes for arranging homogenizing sheets between the groups of respective parallel flat plate electrode couples. CONSTITUTION:Upper electrodes UE 11-UE 14 as shower electrodes are arranged to jet an etchant gas Ga toward lower electrodes. Besides, exhaust ports opening to exhaust chamber PC are provided in the space between chamber wall EW and the peripheries of the lower electrodes LE 11-LE 14. Thus, the throughput can be increased while cutting down the device cost without widening the electrode area. Furthermore, partition plates UP1, UP2, UP3 are provided in an etching chamber. Through these procedures, the etchant gas flow and plasma discharge thereof between the groups of respective parallel flat electrode couples can be homogenized.