SPUTTERING DEVICE FOR SEMICONDUCTOR ELEMENT MANUFACTURING

PURPOSE: To easily and uniformly deposit a metal thin film on the side wall of a contact hole formed on a wafer by providing an inclination control means for turning a supporting means so that a part of the side wall of the contact hole and the base of the contact hole obliquely faces each other. CO...

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Bibliographische Detailangaben
Hauptverfasser:	HAKU SHIYUSEI, KOU AKIMOTO, KIN KENDO, CHIYOU KEISHIYU, SHIN TETSUKOU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: To easily and uniformly deposit a metal thin film on the side wall of a contact hole formed on a wafer by providing an inclination control means for turning a supporting means so that a part of the side wall of the contact hole and the base of the contact hole obliquely faces each other. CONSTITUTION: A decoding motor 26 rotates a rotary shaft 24. Then, an inclined wafer 8 rotates. The side wall 53 of a part of the contact hole 52 formed on an oxide film 50 in the wafer 8 is obliquely led against the base of the metal target 14, and metal particles from the metal target 14 can easily be deposited. The side wall of a remaining part, which contains the side wall 54 of the other part of the contact hole 52, and the like are sequentially exposed to the base of the metal target by the rotation of the rotary shaft 24 and the metal particles from the metal target 14 are easily deposited.