INTEGRATED SHORT-CAVITY LASER

PURPOSE: To manufacture a single-mode semiconductor laser of low power consumption which is capable of being integrated with an OEIC and easily coupled with fiber at low cost. CONSTITUTION: On a substrate 200 of an InP or GaAs or the like, the P -layer 205 of AlInAs or GaAlAs or the like, an active layer 207 of InGaAsP, an n - layer 209 of AlInP or InP or the like and an (n)-contact 113 are formed. By etching, a length is made to be less than ten times an oscillation wavelength, surface edges 215 and 217 at both ends are formed vertically with respect to the layer surface of the active layer 207, Bragg reflectors 107 and 109 are formed on it, and a resonator is formed. Also, an optical fiber is fixed by utilizing a groove which is worked on the substrate 200 and the edge 127 of the groove, so as to bring the end face of the optical fiber 120 into a close distance of 1-5 μm from the surface of an output side Bragg reflector 107. Thus, structurally this laser is manufactured by a normal planar semiconductor manufacturing technique at a low cost and efficiently performs low power consumption operation in a single mode, because of a short resonator.