PULVERIZING AND DISPERSING MEDIA AND PRODUCTION OF HIGH PURITY ITO STARTING MATERIAL

PURPOSE:To provide pulverizing and dispersing media which prevent the incorporation of an impurity into ITO starting material in pulverizing, mixing and dispersing stages and to produce high purity ITO starting material. CONSTITUTION:First of all, 100g of powder which is compounded in 90:10wt. ratio...

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Bibliographische Detailangaben
Hauptverfasser:	TOISHI MITSUTERU, KUDO YOSHINORI, EJIMA KOICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CASTING CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA MAKING METALLIC POWDER MANUFACTURE OF ARTICLES FROM METALLIC POWDER METALLURGY PERFORMING OPERATIONS POWDER METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TREATMENT OF NATURAL STONE WORKING METALLIC POWDER
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Beschreibung
Zusammenfassung:	PURPOSE:To provide pulverizing and dispersing media which prevent the incorporation of an impurity into ITO starting material in pulverizing, mixing and dispersing stages and to produce high purity ITO starting material. CONSTITUTION:First of all, 100g of powder which is compounded in 90:10wt. ratio with In2O3 powder and SnO2 powder having 4N purity is charged into a nylon pot of 3l volume. Then, the ball-like pulverizing and dispersing media having 10mm diameter and consisting of the ITO sintered compact having 92% relative density is charged into the pot so as to make 1l volume, and 200g pure water is added, and then the pot is placed on a ball mill pedestal and allowed to rotate for mixing at 70rpm for 10hr, and slurry is obtained. Then, the obtained slurry is dried, and the ITO starting material is obtained. Next, the ITO starting material is formed to prescribed shape and sintered, and a film is formed using this sintered compact by sputtering method and the ITO film having high purity and lower resistance is obtained.