SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

PURPOSE:To enlarge an electrode-to-electrode span and prevent the generation of short circuit between the electrodes when the electrodes are separated in a self-aligning fashion by using the electrodes for a metal and a silicon compound formed in a self-align fashion as a component of a MOS transistor and separating the electrodes definitely. CONSTITUTION:On the side of a gate component material of a MOS transistor, there is prepared a double layer-based side wall comprising a silicon nitriding film 11 and a CVD oxide film or a multilayer-based or dissimilar material adopted side wall comprising the silicon nitriding film 11, a polycrystal silicon film 12 and a polycrystal silicon oxide film 13 where electrodes are separated. Metal and silicon compounds are formed in a self aliening fashion. This construction enlarges an electrode-to-electrode span to a greater extent compared with a prior art span and separates the electrode definitely in structure, thereby protecting the reliability of semiconductor devices from deterioration induced by dissimilar materials which produce a short circuit between the electrodes.