MANUFACTURE OF THIN FILM TRANSISTOR MATRIX

PURPOSE:To improve the reliability of element, and to improve the yield of the manufacture by forming contact holes, which are to be opened in a second insulating layer, into the normal taper shape, and preventing the conductivity of the surface of a substrate in the manufacture of a thin film transistor(TFT) matrix. CONSTITUTION:A gate electrode 2 and a stored capacity lower electrode 3 are formed on a substrate 1 made of the transparent and insulating material, and a first insulating thin film 4 and an operating semiconductor layer 5 and a channel protecting film 6 are formed thereon in order. A contact layer 7 and a metal film 8 are formed in order on the substrate a parts except for the channel protecting film 6 immediately on the gate electrode 2, and patterning is performed to form a drain electrode 8D and a source electrode 8S and a stored capacity upper electrode 8C. The substrate is covered with a second insulating film 9 made of the transparent resin, and the second insulating film 9 is formed with contact holes, and a transparent electrode film is formed on the substrate and made to contact with the stored capacity upper electrode 8C and the source electrode 8B, and patterning is performed to form a picture element electrode 11.