MANUFACTURE OF THIN FILM TRANSISTOR

PURPOSE: To reduce a leakage current, especially in an off-state, to increase a TFT operating-time driving current, and to improve the characteristic of the polysilicon TFT. CONSTITUTION: By exposing the channel polysilicon layer 4 of a TFT to an oxygen plasma 5, oxygen in the oxygen plasma in the o...

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Bibliographische Detailangaben
1. Verfasser: KAWA KEISAN
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE: To reduce a leakage current, especially in an off-state, to increase a TFT operating-time driving current, and to improve the characteristic of the polysilicon TFT. CONSTITUTION: By exposing the channel polysilicon layer 4 of a TFT to an oxygen plasma 5, oxygen in the oxygen plasma in the oxygen plasma permeates the channel polysilicon layer 4, and combines with atoms of silicon, etc., combined unstably at the boundary surface, etc., between a gate insulating film 3 and the channel polysilicon film 4. By this action, regions where dangling bonds are produced are reduced. As the result, the conductivity of the channel polysilicon layer 4 increases.