AMORPHOUS SEMICONDUCTOR SOLAR CELL AND MANUFACTURE THEREOF

PURPOSE:To provide an amorphous semiconductor solar cell of high reliability by a method wherein an amorphous semiconductor solar cell, especially an amorphous silicon solar cell is remarkably improved in photo-deterioration peculiar to a silicon solar cell. CONSTITUTION:A first electrode layer 2, a...

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Bibliographische Detailangaben
Hauptverfasser: ENDOU TOSHITO, IZUMINA MASANOBU, YAMAGISHI HIDEO, ISHIKAWA ATSUO
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To provide an amorphous semiconductor solar cell of high reliability by a method wherein an amorphous semiconductor solar cell, especially an amorphous silicon solar cell is remarkably improved in photo-deterioration peculiar to a silicon solar cell. CONSTITUTION:A first electrode layer 2, an amorphous semiconductor layer 3, a second electrode layer 4, and a stress relaxing layer 5 are formed on a substrate for the formation of an amorphous semiconductor solar cell, and an i-type amorphous semiconductor layer is changed in multilayer so as to change a part around the interface between a p-type amorphous semiconductor layer and the i-type amorphous semiconductor layer and a part adjacent to the interface between the i-type amorphous semiconductor layer and an n-type amorphous semiconductor layer in inner stress.