JPH061802B
A semiconductor device is provided with a first protection path (30) between a first terminal (Vss) and an input terminal (10), a second protection path (20) between a second power source terminal (Vdd) and the input terminal (10), and a third protection path (40) between the first (Vss) and the sec...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device is provided with a first protection path (30) between a first terminal (Vss) and an input terminal (10), a second protection path (20) between a second power source terminal (Vdd) and the input terminal (10), and a third protection path (40) between the first (Vss) and the second (Vdd) power source terminals. Each protection path includes a first (31, 21, 41) and a second (32, 22, 42) P-N junction formed to be reverse biased, and is made conductive when the voltage between the corresponding two terminals exceeds a predetermined voltage so as to protect an internal circuit connected to the input terminal from an electrostatic breakdown. |
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