TREATMENT DEVICE

PURPOSE:To provide a high-performance and economical treatment device which can maintain the inert gas environment highly pure within a load lock chamber, consumes less inert gas and greatly serves to suppress generation of particles and to prevent chemical contamination. CONSTITUTION:A vertical hea...

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Bibliographische Detailangaben
1. Verfasser:	USHIGAWA HARUNORI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE:To provide a high-performance and economical treatment device which can maintain the inert gas environment highly pure within a load lock chamber, consumes less inert gas and greatly serves to suppress generation of particles and to prevent chemical contamination. CONSTITUTION:A vertical heat treatment device in a closed system structure where a specific treatment is performed by carrying a semiconductor wafer into a process tube 1 from a load lock chamber 11 is provided with a gas introduction pipe 12 for supplying inert gas into the load lock chamber 11 and a gas circulation purification system 40 for returning the purified inert gas to the load lock chamber 11 while leading the inert gas in the load lock chamber 11 and eliminating the gas-shaped impurities and particle-shaped purities in the led gas by a gas purification filter 43.