METAL OXIDE SINTERED BODY-SPUTTERING TARGET AND ITS PRODUCTION THEREOF

PURPOSE:To suppress abnormal discharge in film formation and to prevent the damage of a target by unevenly distributing a dopant adding part to the target. CONSTITUTION:Two kinds of materials, zinc oxide and a mixture of zinc oxide with a trace quantity of copper oxide dopant are sintered and pulver...

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Bibliographische Detailangaben
Hauptverfasser:	KASA YOSHITOKU, TOKAI MASAKUNI
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	PURPOSE:To suppress abnormal discharge in film formation and to prevent the damage of a target by unevenly distributing a dopant adding part to the target. CONSTITUTION:Two kinds of materials, zinc oxide and a mixture of zinc oxide with a trace quantity of copper oxide dopant are sintered and pulverized. The pulverized materials are classified and packed into a previously prepared vessel 24 for sintering composed of a mold 20 and a partition 22. After that, the partition 22 is removed and the material is pressed and sintered at an adequate temp. Thus, the sputtering target 14 small in resistivity and free from the generation of abnormal discharge caused by charge-up in sputtering is formed. The dopant adding part 10 is unevenly distributed by the shape of kind, and by adding into