JPH0615582B

PURPOSE:To obtain an Si-containing ethylenic polymer, having the backbone chain constituted of specific structural units and a specified mol.wt. and capable of forming fine patterns with extremely high sensitivity even to near ultraviolet rays and exhibiting higher resistance to dry etching. CONSTIT...

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Bibliographische Detailangaben
1. Verfasser:	SAIGO KAZUHIDE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR AUXILIARY PROCESSES IN PHOTOGRAPHY BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR,STEREO-PHOTOGRAPHIC PROCESSES PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	PURPOSE:To obtain an Si-containing ethylenic polymer, having the backbone chain constituted of specific structural units and a specified mol.wt. and capable of forming fine patterns with extremely high sensitivity even to near ultraviolet rays and exhibiting higher resistance to dry etching. CONSTITUTION:An Si atom-containing ethylenic polymer having the backbone chain constituted of structural units expressed by the formula and 3,000-1,000,000mol.wt. The above-mentioned ethylenic polymer is used as a resist composition by adding a bisazide [e.g. 4,4'-diazidochalcone or 2,6-di-(4'- azidobenzal)cyclohexanone] as a photocrosslinking agent in an amount of nor mally 0.1-30wt.% based on the polymer. Alternatively, an organic film and a resist layer having a given resist pattern are successively formed on a sub strate and the above-mentioned resist layer is formed from the afore-mentioned ethylenic polymer by a method for forming the pattern according to a two-layer structural resist method using the above-mentioned resist pattern as a dry etch ing mask for the organic film.