OPTICAL SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

PURPOSE:To shorten the manufacturing time by simplifying the process thereby saving manufacturing facility, concerning an optical semiconductor device and its manufacture. CONSTITUTION:This optical semiconductor device has a one-conductivity-type semiconductor layer 3, an intrinsic semiconductor layer 3, an opposite-conductivity-type semiconductor layer 5, and a transparent conductive film 7 stacked in order on a substrate, and a chromium electrode 9 arranged on the transparent conductive film 7, and the transparent conductive film 7 contains phosphorus and chromium. Moreover, this includes a process of stacking the one-conductivity-type semiconductor layer 3, the intrinsic semiconductor layer 4, and the opposite-conductivity-type semiconductor layer 5 in order on the substrate 1, a process of accumulating a chromium film 8, after sticking phosphorus to the surface of the opposite- conductivity-type semiconductor layer 5, and further, forming the transparent conductive film 7 including phosphorus and chromium between the opposite-conductivity-type semiconductor layer 5 and the chromium film 8 by heat treatment, and a process of selectively etching the chromium film 8, using a mask, thereby forming a window 10 to expose the transparent conductive film 7. Moreover, the stacking of the one-conductivity-type semiconductor layer 3, the intrinsic semiconductor layer 4, and the opposite-conductivity-type semiconductor layer 5 and the sticking of phosphorus to the surface of the opposite-conductivity-type semiconductor layer 5 are performed in the continuous process by plasma CVD method.