CHARGE TRANSFER DEVICE AND ITS MANUFACTURE

PURPOSE:To increase the charge capacity of a charge transfer device by preventing the occurrence of a charge transferring defect. CONSTITUTION:In the title device 10, a first insulating layer 12 is formed on the entire surface of a semiconductor substrate 11 and first-layer gate electrodes 13 are formed on the surface of the layer 12, and then, the surfaces of the electrodes 13 are covered with a second insulating layer 14. Then second-layer gate electrodes 15 having hat-like cross sections are formed on the sides of the layer 14 and surface of the layer 12 and impurity diffusion areas 16 in which an impurity is diffused are formed below the electrodes 15 in the surface section of the substrate 11 so that each area 16 can have such an impurity concentration gradient that the concentration becomes lower in the charge transferring direction. In addition, the adjacent first-layer gate electrodes 13 and second-layer gate electrodes 15 are connected to each other through first or second wiring 17 or 18 and the two kinds of wiring 17 and 18 are alternately arranged.