PLASMA CVD DEVICE

PURPOSE:To considerably suppress the occurrence of pinholes in a thin semiconductor film and the exfoliation of the film by preventing the deposition of granular silicon on the inner wall of a reactor. CONSTITUTION:Gas for preventing residence is introduced from a sweeping means 15 into parts in whi...

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Bibliographische Detailangaben
Hauptverfasser:	HIROBE TOSHIHIKO, HIRAKI JUNICHI, MATSUSHITA KAZUHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE:To considerably suppress the occurrence of pinholes in a thin semiconductor film and the exfoliation of the film by preventing the deposition of granular silicon on the inner wall of a reactor. CONSTITUTION:Gas for preventing residence is introduced from a sweeping means 15 into parts in which reactive gas is liable to stay in a reactor 1 so as to prevent the retention of the reactive gas and the formation of granular silicon is suppressed. The formation of powdery silicon due to the rapid cooling of the reactive gas is prevented by heating the gas for preventing retention.