INFRARED DETECTOR

INFRARED DETECTOR

PURPOSE:To provide an infrared detector of heterojunction type of GeSi and Si without being affected by an impurity layer on the surface of an Si substrate and a crystal defect. CONSTITUTION:An infrared detector comprises a P-type Si substrate 2, an Si buffer layer 21 which is formed on the P-type S...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: YONEDA KIWA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To provide an infrared detector of heterojunction type of GeSi and Si without being affected by an impurity layer on the surface of an Si substrate and a crystal defect. CONSTITUTION:An infrared detector comprises a P-type Si substrate 2, an Si buffer layer 21 which is formed on the P-type Si substrate 2 and has a P-type impurity concentration of 10 cm or less, and a GeSi layer 1 formed on the Si buffer layer 21. Accordingly, the infrared detector having the uniform barrier height and the good crystalline GeSi layer can be obtained.