SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

PURPOSE:To limit the luminous part of an active layer to the slant surface of the central part of the active layer and to contrive the improvement of the luminous efficiency of a semiconductor laser by a method wherein the central part of the active layer is formed on its slant surface, a current co...

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1. Verfasser: YOSHITAKE SHIRO
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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creator YOSHITAKE SHIRO
description PURPOSE:To limit the luminous part of an active layer to the slant surface of the central part of the active layer and to contrive the improvement of the luminous efficiency of a semiconductor laser by a method wherein the central part of the active layer is formed on its slant surface, a current constricting layer is provided on the central part and an inhibition band width in the central part of the slant surface of the active layer is made equal with that in the part other than the central part. CONSTITUTION:Second and third P-type In0.5(Ga0.3Al0.7)0.5P clad layers 6 and 8 contain more Zn atoms on their slant surfaces 16 than those on a GaAs substrate main surface 14. Accordingly, an In0.48Ga0.52P current constricting layer 7 increases the amount of thermodiffusion of the Zn atoms on its slant surface 16 compared with that on the main surface 14. When the diffusion thicknesses of the Zn atoms in a slant part 13 and a main surface 12 are assumed d1 and d2, the thickness (d) of the layer 7 is set in a relation of d2
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CONSTITUTION:Second and third P-type In0.5(Ga0.3Al0.7)0.5P clad layers 6 and 8 contain more Zn atoms on their slant surfaces 16 than those on a GaAs substrate main surface 14. Accordingly, an In0.48Ga0.52P current constricting layer 7 increases the amount of thermodiffusion of the Zn atoms on its slant surface 16 compared with that on the main surface 14. When the diffusion thicknesses of the Zn atoms in a slant part 13 and a main surface 12 are assumed d1 and d2, the thickness (d) of the layer 7 is set in a relation of d2&lt;d&lt;=d1 from a relation of d2&lt;d1, whereby the part 13 is turned into a P-type conduction type layer and the part 12 is left as an N-type conduction type later. 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CONSTITUTION:Second and third P-type In0.5(Ga0.3Al0.7)0.5P clad layers 6 and 8 contain more Zn atoms on their slant surfaces 16 than those on a GaAs substrate main surface 14. Accordingly, an In0.48Ga0.52P current constricting layer 7 increases the amount of thermodiffusion of the Zn atoms on its slant surface 16 compared with that on the main surface 14. When the diffusion thicknesses of the Zn atoms in a slant part 13 and a main surface 12 are assumed d1 and d2, the thickness (d) of the layer 7 is set in a relation of d2&lt;d&lt;=d1 from a relation of d2&lt;d1, whereby the part 13 is turned into a P-type conduction type layer and the part 12 is left as an N-type conduction type later. 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CONSTITUTION:Second and third P-type In0.5(Ga0.3Al0.7)0.5P clad layers 6 and 8 contain more Zn atoms on their slant surfaces 16 than those on a GaAs substrate main surface 14. Accordingly, an In0.48Ga0.52P current constricting layer 7 increases the amount of thermodiffusion of the Zn atoms on its slant surface 16 compared with that on the main surface 14. When the diffusion thicknesses of the Zn atoms in a slant part 13 and a main surface 12 are assumed d1 and d2, the thickness (d) of the layer 7 is set in a relation of d2&lt;d&lt;=d1 from a relation of d2&lt;d1, whereby the part 13 is turned into a P-type conduction type layer and the part 12 is left as an N-type conduction type later. A current injected through a P-type GaAs contact layer 10 is stopped its pass in the main surface part, is trade to pass through in the slant part 13 and can be made to concentrate in the slant surface part 13.</abstract><edition>5</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
title SEMICONDUCTOR LASER AND MANUFACTURE THEREOF
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