SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

PURPOSE:To limit the luminous part of an active layer to the slant surface of the central part of the active layer and to contrive the improvement of the luminous efficiency of a semiconductor laser by a method wherein the central part of the active layer is formed on its slant surface, a current constricting layer is provided on the central part and an inhibition band width in the central part of the slant surface of the active layer is made equal with that in the part other than the central part. CONSTITUTION:Second and third P-type In0.5(Ga0.3Al0.7)0.5P clad layers 6 and 8 contain more Zn atoms on their slant surfaces 16 than those on a GaAs substrate main surface 14. Accordingly, an In0.48Ga0.52P current constricting layer 7 increases the amount of thermodiffusion of the Zn atoms on its slant surface 16 compared with that on the main surface 14. When the diffusion thicknesses of the Zn atoms in a slant part 13 and a main surface 12 are assumed d1 and d2, the thickness (d) of the layer 7 is set in a relation of d2