PT-ALLOY EXTRAFINE WIRE FOR SEMICONDUCTOR ELEMENT

PURPOSE:To provide a Pt-alloy extrafine wire, for semiconductor element use, wherein it enhances the high-temperature strength of a Pt extrafine wire, it lowers the incidence of an A-point exfoliation in a high-temperature shelf test and it is extremely useful for a wire bonding method and a bump co...

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Hauptverfasser: KUJIRAOKA TAKESHI, ITABASHI KAZUMITSU
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To provide a Pt-alloy extrafine wire, for semiconductor element use, wherein it enhances the high-temperature strength of a Pt extrafine wire, it lowers the incidence of an A-point exfoliation in a high-temperature shelf test and it is extremely useful for a wire bonding method and a bump connecting method. CONSTITUTION:One kind or two kinds out of Os, Ru, Ir and Rh are added to high-purity Pt at a total addition amount of 0.01 to 5wt.%, one kind or two or more kinds out of Be, Ge, Ca, Si, Fe, Sc, Y and rare-earth elements are added to it at 0.0001 to 0.005wt.%, and this mixture is melted and cast. Then, a grooved roll working operation is executed, an annealing treatment is executed in its halfway part, a wiredrawing operation is executed, and a stress is removed sufficiently. Thereby, a bus having a wire diameter of 25mum is formed.