PT-ALLOY EXTRAFINE WIRE FOR SEMICONDUCTOR ELEMENT
PURPOSE:To provide a Pt-alloy extrafine wire, for semiconductor element use, wherein it enhances the high-temperature strength of a Pt extrafine wire, it lowers the incidence of an A-point exfoliation in a high-temperature shelf test and it is extremely useful for a wire bonding method and a bump co...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PURPOSE:To provide a Pt-alloy extrafine wire, for semiconductor element use, wherein it enhances the high-temperature strength of a Pt extrafine wire, it lowers the incidence of an A-point exfoliation in a high-temperature shelf test and it is extremely useful for a wire bonding method and a bump connecting method. CONSTITUTION:One kind or two kinds out of Os, Ru, Ir and Rh are added to high-purity Pt at a total addition amount of 0.01 to 5wt.%, one kind or two or more kinds out of Be, Ge, Ca, Si, Fe, Sc, Y and rare-earth elements are added to it at 0.0001 to 0.005wt.%, and this mixture is melted and cast. Then, a grooved roll working operation is executed, an annealing treatment is executed in its halfway part, a wiredrawing operation is executed, and a stress is removed sufficiently. Thereby, a bus having a wire diameter of 25mum is formed. |
---|