JPH0586677B

PURPOSE:To obtain a solar battery which has high conversion efficiency and in which an N type layer is provided at a metal substrate side on the substrate with a PiN layer so that a P type layer is at a light incident sidedby containing 0.5-5X10 atoms/cm of boron in an I type layer of the side near the P type layer and specifying the thickness of the layer of 2X10 atoms/cm to 30% of the entire I type layer. CONSTITUTION:A PiN junction is formed by laminating N type layer 2, an I type layer laminated with layers 3, 8 and a P type layer 4 all made of amorphous Si layers on a substrate 1 made of a stainless steel plate, a transparent conductive film 5 is covered on the layer 4, and current collecting electrodes 6 are mounted at the ends. In this structure, 0.5-5X10 atoms/cm of boron are contained in the layer 8 contacted with the layer 4, and the thickness of the layer having a density of 2X10 atoms/cm is specified to 30% of the thickness of the entire I type layer. Thus, the electric field distribution in the I type layer is equalized, the influence of the recombination of carrier generated due to incident light during moving can be reduced, thereby suppressing the increase in the shortcircuiting photocurrent.