JPH058527B

PURPOSE:To obtain an electrically conductive transparent film having surface resistivity within a wide range by specifying the amount of indium to the total amount of indium and silicon in an electrically conductive transparent film contg. mixed oxide consisting of silicon oxide and indium oxide as...

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Bibliographische Detailangaben
Hauptverfasser: KAWAGUCHI MASAYUKI, OKUDA KOJI, KATSUBE SHIZUKO
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To obtain an electrically conductive transparent film having surface resistivity within a wide range by specifying the amount of indium to the total amount of indium and silicon in an electrically conductive transparent film contg. mixed oxide consisting of silicon oxide and indium oxide as the principal component. CONSTITUTION:An electrically conductive transparent film contg. mixed oxide consisting of silicon oxide and indium oxide as the principal component is formed on a glass substrate by an electron beam heating-vapor deposition method with pellets of silicon oxide mixed with indium oxide as a material to be vapor-deposited. At this time, the amount of indium in the film is regulated to >=25wt% of the total amount of indium and silicon. Thus, an electrically conductive transparent film having about 10 -10 OMEGA/sq. surface resistivity is obtd.