TRANSISTOR AND MANUFACTURE THEREOF
PURPOSE:To restrain electrons from being recombined together at a collector- base interface so as to enhance a transistor in operation characteristics. CONSTITUTION:A collector region is composed of two layers, an upper layer 9 and a lower layer 2. The lower layer 2 is formed through a VPE method, a...
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creator | KATAMI KAZUHIKO ISHIKAWA YAMATO NONAKA KENICHI |
description | PURPOSE:To restrain electrons from being recombined together at a collector- base interface so as to enhance a transistor in operation characteristics. CONSTITUTION:A collector region is composed of two layers, an upper layer 9 and a lower layer 2. The lower layer 2 is formed through a VPE method, and the upper layer 9, a base region 3, and emitter regions 4 and 5 are formed by MOCVD method or an MBE method. By this setup an excellent base.collector interface is formed, electrons are prevented from being recombined together, and as a result a hetero-junction bipolar transistor can be improved in operation characteristics. |
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CONSTITUTION:A collector region is composed of two layers, an upper layer 9 and a lower layer 2. The lower layer 2 is formed through a VPE method, and the upper layer 9, a base region 3, and emitter regions 4 and 5 are formed by MOCVD method or an MBE method. By this setup an excellent base.collector interface is formed, electrons are prevented from being recombined together, and as a result a hetero-junction bipolar transistor can be improved in operation characteristics.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | TRANSISTOR AND MANUFACTURE THEREOF |
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