TRANSISTOR AND MANUFACTURE THEREOF

TRANSISTOR AND MANUFACTURE THEREOF

PURPOSE:To restrain electrons from being recombined together at a collector- base interface so as to enhance a transistor in operation characteristics. CONSTITUTION:A collector region is composed of two layers, an upper layer 9 and a lower layer 2. The lower layer 2 is formed through a VPE method, a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KATAMI KAZUHIKO, ISHIKAWA YAMATO, NONAKA KENICHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE:To restrain electrons from being recombined together at a collector- base interface so as to enhance a transistor in operation characteristics. CONSTITUTION:A collector region is composed of two layers, an upper layer 9 and a lower layer 2. The lower layer 2 is formed through a VPE method, and the upper layer 9, a base region 3, and emitter regions 4 and 5 are formed by MOCVD method or an MBE method. By this setup an excellent base.collector interface is formed, electrons are prevented from being recombined together, and as a result a hetero-junction bipolar transistor can be improved in operation characteristics.