SEMICONDUCTOR LASER DEVICE
PURPOSE:To provide a long-life and high-output semiconductor laser device. CONSTITUTION:First and second In/GaAlP clad layers 105 and 107 are crystal- grown, being equipped with an undoped active layer 106 of InGaP between, on the main surface 103 of a GaAs semiconductor substrate 102 inclined in th...
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| Zusammenfassung: | PURPOSE:To provide a long-life and high-output semiconductor laser device. CONSTITUTION:First and second In/GaAlP clad layers 105 and 107 are crystal- grown, being equipped with an undoped active layer 106 of InGaP between, on the main surface 103 of a GaAs semiconductor substrate 102 inclined in the direction of (011) from (100) face within the range of 0 |
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